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IXTX24N100
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
PLUS 247 TM (IXTX) Outline
g fs
C iss
C oss
C rss
t d(on)
V DS = 10V, I D = 0.5 ? I D25 , Note 1
V GS = 0V, V DS = 25V, f = 1MHz
Resistive Switching Times
15
27
8700
785
315
35
S
pF
pF
pF
ns
t r
t d(off)
t f
Q g(on)
Q gs
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
35
75
21
267
52
ns
ns
ns
nC
nC
Terminals:
1 - Gate
2 - Drain
3 - Source
Q gd
R thJC
R thCS
Source-Drain Diode
142
0.15
nC
0.22 ° C/W
° C/W
Dim.
A
A 1
A 2
b
b 1
b 2
C
D
Millimeter
Min. Max.
4.83 5.21
2.29 2.54
1.91 2.16
1.14 1.40
1.91 2.13
2.92 3.12
0.61 0.80
20.80 21.34
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
E
e
L
15.75 16.13
5.45 BSC
19.81 20.32
.620 .635
.215 BSC
.780 .800
I S
I SM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
24
96
A
A
L1
Q
R
3.81 4.32
5.59 6.20
4.32 4.83
.150 .170
.220 0.244
.170 .190
V SD
t rr
Note
I F = 24A, V GS = 0V, Note 1
I F = 24A, -di/dt = 100A/ μ s, V R = 100V, V GS = 0V
1: Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
850
1.5
V
ns
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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